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Hi folks, I suspect this has been asked and answered many times but I couldn’t find anything definitive when I searched. I am trying to understand how this works, I am using an N-Channel FET I sort of expected, when I started looking that the PNP to be at the top with its collector to the gate and the NPN below it in a similar fashion. How wrong can you be with just the one head? I found several examples, pulled a couple of GP transistors from my box (2N3906 / 2N3904) And shoved them onto a breadboard. Well it works, but it occurred to me that it might be a really good idea to find out why and how. Particularly as I want to make sure it keeps working.

I would appreciate a leg up and some recommended reading, BJT’s for dummies perhaps!! Thanks in advance looking forward to learning. This is the power board for an AVR I am trying to build, the origional is toast. The 317 puts out about 6V at startup and as soon as the fet begins to turn on that will quickly rise to 10.4v The FET hold its source at about 25v, zener - VGS(th) In theory at this point the PWM would have kicked in (b) is the output of an opamp with a max 50mA sink capability, no source to speak of. This board isnt finished, no fet driver yet, but I have an earlier itteration with the fet gate pulled up by resistors which is whats driving the genny now, badly I might add. Click to expand.Doesn't invalidate anything I said, the design is flawed from the gitgo. I will repeat, MOSFETs are not linear devices.

If you try to use them as such you will not have good results. I could be wrong, but I don't think I am. BJTs are linear, not all the way across, but for wide region of their curve. This is why they work well for emitter followers (the other name for common collectors). It is obvious you are trying to use it as a voltage follower feeding a LM317.

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Operates as a MOSFET with an injecting region on its Drain side to provide for conductivity modulation of the Drain drift region so that on-state losses are reduced. ECE250 Lab V Page 1 of 9 ECE 250 Lab V. Diode Switching Spee d and BJT Transistor Switches V MOSFET Drivers and Pulse-Width Modulation. In this lab we will look at driving high current loads with a MOSFET switches.

Why is it for mac. Funny thing, a BJT would be a drop in replacement, a Darlington BJT even more so. Have you trying wiring this concept? The LM317T must have a 120Ω minimum resistance between the output and adjust, to satisfy the 10ma minimum current requirement. What is the target output of the LM317 regulator? And do you have the bridge circuit connected to the mains? This is not a good idea, but I can't interpret the schematic that far. Quick side lesson.

The first illustration shows a classic Common Collector configuration (AKA, voltage follower, emitter follower). A emitter follower will match the voltage of the base minus the BE drop. The input resistance at the base will be the gain of the transistor (beta, or β) times the emitter resistance. So if β = 150 (not an uncommon value) then the input resistance of this circuit is 150KΩ. This is a common voltage regulator for many designs. Darlington Pairs have the gain of both transistors multiplied.

So if both transistors have a β of 150, the total gain is 22,500, and the input resistance of the circuit is 22.5MΩ. This kinda makes up for the extra BE drop. With BJTs the arrow points to the negative side, always. If the bias is reversed they are turned off, otherwise they look a lot like diodes with extra bonus points. You'r right the MOSFET is a lousy follower, I even think I understand why now thanks to all the input here.

That said I have a FET, whereas I dont have any high voltage high power BJT's. Definatly a requirement of the next itteration I think. Its offset starts at about 2V and increases with input voltage to about 5V. The circuit is built, all but the totem-pole. The lm317 has a 150/1100Ω divider giving about 10.5V once its input is at a couple of volts above that and the FET is limiting that input voltage to about 25V. Both caps are 0.1F and I have added an LED limited to 5mA at 10V across the output. This application has a power supply of 10 to 12VAC when it first powers up and as much as 130VAC once it running.

Thats a real world problem that I cant avoid, if it doesn't work at 10V then it cant ever reach 120V and my generator will not work. Lets put the supply part of this to bead for the time being, I know it needs changing but frankly thats not as important, right now, as getting the PWM gate drive to work on the second FET. Am I correct with these asumptions:- 1. Both transistors are working in comon collector mode. They can only be ON when the gate is charging or discharging because Ibe is what turns them on. Ib will be inherrently limmited because once the turn on threshold is reached any aditional 'potential' current will be Iec.